The objective of this experiment is to measure the i v curve for p n junction diode and to understand the characteristics of p n junction. P n junctions consist of two semiconductor regions of opposite type.
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However unlike a resistor a diode does not behave linearly with respect to the applied voltage as the diode has an exponential current voltage i v relationship and therefore we can not described its operation by simply using an equation such as ohms law.
P n junction diodes pdf. A schottky junction is a special case of a pn junction where metal serves the role of the p type semiconductor. Thus v 10v when the voltage is reversed the p n junction is switched from conduction state. The p n junction diode is a two terminal device.
In forward bias condition the diode allows electric current whereas in reverse bias condition the diode does not allow electric current. A pn junction is formed when an n type material is fused together with a p type material creating a semiconductor diode in the previous tutorial we saw how to make an n type semiconductor material by doping a silicon atom with small amounts of antimony and also how to make a p type semiconductor material by doping another silicon atom with boron. P n junction diode n type material p type material n type material p type material a p n junction diode is made by forming a p type region of material directly next to a n type region.
While a diode can be made from a single p n junction. This is the basic construction of the p n junction diode. When the applied voltage approaches 06 volts the exponential nature of the junction causes the resistance to drop dramatically.
Such junctions show a pronounced rectifying behavior. A p n junction diode is a two terminal device that allows electric current in one direction and blocks electric current in another direction. A p n junction diode is formed by doping one side of a piece of silicon with a p type dopant boran and the other side with a n type dopant phosphorusge can be used instead of silicon.
A p n junction is the metallurgical boundary between the n and p regions of a semiconductor crystal. The circuit is shown below v v s 1 2 100 w forward current through diode is 100 ma. A pn junction diode is one of the simplest semiconductor devices around and which has the characteristic of passing current in only one direction only.
It needs same time to return to non conduction. From 0 to 05 volts the silicon p n junction is quite resistive. They are also called p n diodes in analogy with vacuum diodes.
But when the device has no external applied forces no current can flow. A p n junction is in series with 100 ohms resistor p n junction is basically a diode. The silicon p n junction diode appears to be an electrical switch that turns on when 06 volts is applied.
For example a common type of transistor the bipolar junction transistor consists of two pn junctions in series in the form npn or pnp.
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